2003. 7. 24 1/3 semiconductor technical data ktc3502 epitaxial planar npn transistor revision no : 2 high-definition crt display video output application. features h high voltage : v ceo =200v. h high transition frequency : f t =150mhz(typ.). h low collector output capacitance : c ob =1.7pf(typ.). maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 200 v emitter-base voltage v ebo 5v collector current dc i c 100 ma pulse i cp 200 collector power dissipation ta=25 ? p c 1.5 w tc=25 ? 5 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =150v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 200 - - v dc current gain h fe v ce =5v, i c =10ma 70 - 240 - collector-emitter saturation voltage v ce(sat) i c =20ma, i b =2ma - - 0.6 v base-emittter saturation voltage v be(sat) i c =20ma, i b =2ma - - 1.0 v transition frequency f t v ce =30v, i c =10ma - 150 - mhz collector output capacitance c ob v cb =30v, i e =0, f=1mhz - 1.7 - pf reverse transfer capassification c re v cb =30v, f=1mhz - 1.2 - pf note : h fe classification o:70 q 140 , y:120 q 240
2003. 7. 24 2/3 ktc3502 revision no : 2
2003. 7. 24 3/3 ktc3502 revision no : 2
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